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| PH865C15 (20A) High Voltage Schottky barrier diode Major characteristics Characteristics PH865C15 Units Condition VRRM VF IO 150 0.90 20 V V A Tc=25C MAX. (150V / 20A ) [0401] Outline drawings, mm 11.60.2 Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Connection diagram 1 2 3 Package : TO-247 Epoxy resin UL : V-0 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current Non-repetitive surge current ** Operating junction temperature Storage temperature Symbol VRSM VRRM Io IFSM Tj Tstg Square wave, duty=1/2 Tc=108C Sine wave 10ms 1shot Conditions tw=500ns, duty=1/40 Rating 150 150 20 * 150 +150 -40 to +150 Unit V V A A C C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.90 150 1.5 Unit V A C/W Mechanical characteristics Mounting torque Approximate mass Recommended torque 0.4 to 0.6 4.9 N*m g (150V / 20A ) Characteristics Forward Characteristic (typ.) 100 PH865C15R (20A) Reverse Characteristic (typ.) Tj=150C 1 Tj=125C 10 (A) Forward Current 10 Tj=150C Tj=125C Tj=100C Tj=25C 1 (mA) Tj=100C 10 0 Reverse Current 10 -1 Tj= 25C IF 10 -2 IR 10 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -3 0 10 20 30 40 50 60 70 80 90 100110120130140150160 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation (max.) 16 Io Reverse Power Dissipation (max.) 20 18 360 DC (W) (W) 14 16 14 12 10 8 6 4 2 0 VR Forward Power Dissipation 10 Square wave =60 Square wave =120 Sine wave =180 8 Square wave =180 DC Reverse Power Dissipation 12 360 =180 6 4 WF 2 Per 1element 0 0 2 4 6 8 10 12 PR 0 20 40 60 80 100 120 140 160 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 160 150 140 1000 Junction Capacitance Characteristic (max.) (C) 130 120 DC Sine wave =180 Square wave =180 Square wave =120 Square wave =60 360 Io VR=75V Case Temperature 110 100 90 80 70 60 50 0 5 10 15 20 Junction Capacitance (pF) Cj 100 Tc 10 25 30 1 10 100 1000 :Conduction angle of forward current for each rectifier element Io Average Output Current (A) VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (150V / 20A ) Surge Capability (max.) 1000 1000 PH865C15R (20A) Surge Current Ratings (max.) (A) 100 IFSM PeakHAlf-WaveCurrent (A) 1 10 100 Peak Half - Wave Current 100 I FSM 10 10 1 10 100 1000 Number of Cycles at 50Hz tTime (ms) Sinewave Transient Thermal Impedance (max.) 10 1 (C/W) Rth(j-c):1.5C/W 10 0 Transient Thermal Impedance 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) |
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